[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS
Measurement avoiding the influence of high concentration layers using SSDP-SIMS.
From the perspective of cost reduction, the use of high-resistance Si substrates for power devices made of GaN is expected. However, it is said that if Al and Ga diffuse to the surface of the Si substrate during high-temperature film formation, a low-resistance layer is formed, leading to leakage. Therefore, we will introduce a case where SIMS analysis was conducted to evaluate the presence or absence of Al and Ga diffusion into the Si substrate. To accurately assess trace diffusion, measurements were conducted from the Si substrate side towards the GaN layer.
- Company:一般財団法人材料科学技術振興財団 MST
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